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IS43DR81280C-25DBL IC DRAM 1GBIT PARALLEL 60TWBGA ISSI, Integrated Silicon Solution Inc

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IS43DR81280C-25DBL IC DRAM 1GBIT PARALLEL 60TWBGA ISSI, Integrated Silicon Solution Inc

Name: IS43DR81280C25DBL IC DRAM 1GBIT PARALLEL 60TWBGA ISSI Integrated Silicon Solution Inc
Brand: ISSI, Integrated Silicon Solution Inc
Price: 1 USD

Brand Name : ISSI, Integrated Silicon Solution Inc

Model Number : IS43DR81280C-25DBL

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Volatile

Memory Format : DRAM

Technology : SDRAM - DDR2

Memory Size : 1Gbit

Memory Organization : 128M x 8

Memory Interface : Parallel

Clock Frequency : 400 MHz

Write Cycle Time - Word, Page : 15ns

Access Time : 400 ps

Voltage - Supply : 1.7V ~ 1.9V

Operating Temperature : 0°C ~ 85°C (TC)

Mounting Type : Surface Mount

Package / Case : 60-TFBGA

Supplier Device Package : 60-TWBGA (8x10.5)

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Product Details

FEATURES

● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V
● High speed data transfer rates with system
frequency up to 933 MHz
● 8 internal banks for concurrent operation
● 8n-bit pre-fetch architecture
● Programmable CAS Latency
● Programmable Additive Latency: 0, CL-1,CL-2
● Programmable CAS WRITE latency (CWL) based on tCK
● Programmable Burst Length: 4 and 8
● Programmable Burst Sequence: Sequential or Interleave
● BL switch on the fly
● Auto Self Refresh(ASR)
● Self Refresh Temperature(SRT)
● Refresh Interval:
7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
● Partial Array Self Refresh
● Asynchronous RESET pin
● TDQS (Termination Data Strobe) supported (x8 only)
● OCD (Off-Chip Driver Impedance Adjustment)
● Dynamic ODT (On-Die Termination)
● Driver strength : RZQ/7, RZQ/6 (RZQ = 240  )
● Write Leveling
● Up to 200 MHz on DLL off mode
● Operating temperature:
Commercial (TC = 0°C to +95°C)
Industrial (TC = -40°C to +95°C)
Automotive, A1 (TC = -40°C to +95°C)
Automotive, A2 (TC = -40°C to +105°C)

Specifications

Attribute	Attribute Value
Manufacturer	ISSI
Product Category	Memory ICs
Manufacturer	ISSI
Product-Category	DRAM
RoHS	Details
Brand	ISSI

Descriptions

SDRAM - DDR2 Memory IC 1Gb (128M x 8) Parallel 400MHz 400ps 60-TWBGA (8x10.5)

DRAM Chip DDR2 SDRAM 1Gbit 128Mx8 1.8V 60-Pin TW-BGA

DRAM DDR2,1G,1.8V, RoHs 400MHz,128Mx8

IS43DR81280C-25DBL IC DRAM 1GBIT PARALLEL 60TWBGA ISSI, Integrated Silicon Solution Inc Manufactures

IS43DR81280C-25DBL IC DRAM 1GBIT PARALLEL 60TWBGA ISSI, Integrated Silicon Solution Inc Images

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